Skip to content

Electron Microscopy Facility

Transmission Electron Microscope (TEM)

General Information

Please refer to the Transmission Electron Microscope Instrument Specifications table (bottom of the page) to find out which microscope is most suited for your requirement by comparing the different features.

Variable Energy Transmission Electron Microscope – HT7830

Instrument Specifications

The new Hitachi HT7830 UHR 120kV TEM joins the instrumentation fleet at Clemson AMRL. Procuring the very first unit in the US of this innovative technology, the EM Facility at AMRL is at the very cutting edge of modern EM technologies to serve a diverse array of research. This is the latest and Hitachi’s most advanced TEM designed to operate tunable accelerating voltage range of 20 kV-120 kV. This microscope incorporates Hitachi’s Dual-mode objective lens technology that allows users to image their specimens in a variety of conditions such as low magnification, wide-field high contrast, high resolution, and more—all in one microscope.

Resolution: 0.14 nm at 120 kV

Magnification: x1,000,000

Analytical : EDS

Applications

  • Best for biological samples
  • Best for polymers
  • Best for beam sensitive samples
  • Low energy beam minimizes surface damage caused
  • High sensitivity EDS detector allows chemical identification

tem-ht7830.png

In high contrast mode TEM is ideal for biological specimen visualization. An unstained section of a rat ischial nerve is visualized without applying electron staining. Inset red box shows an enlarged image with a layered myelin structure. b. TEM image of a 22 nm node FinFET device at 300,000x. c. Single crystal silicon with crystal lattice measurement of 0.19 nm.
*Images reproduced from Hitachi product material.

ht7830

Transmission Electron Microscope – H9500

Instrument Specifications

Source: LaB6
Resolution: 0.102 nm lattice; 0.180 point

Magnification:
Zoom1: xx1,000 – xx1,500,000.
Zoom2 (SA): x4,000 – x500,000.

Low Mag: x200 – x500.
Acceleration Voltage: 300keV (standard); 200 keV; 100keV

Analytical: EDS

Applications

  • Best for ceramics
  • Best for alloys
  • Best for hard materials in general
  • High energy beam transmits relatively deeper in the material
  • Better resolution than low-energy TEM
  • Electron Diffraction analysis
  • Heat stage allows in-situ thermal TEM experiments
  • High sensitivity EDS detector allows chemical identification

tem-h9500.png

a. Tunable acceleration voltage for different types of materials. Carbon nanotubes at 100 kV. Silicon Nitride at 200 kV. Stainless steel at 300 kV. b. Atomic structural image of silicon lattice resolution of 0.135 nm. c. EDS elemental mapping of TEM region of interest for Gallium Arsenic sample. d. Nano-area diffraction patterns collected from yellow circle areas with a probe diameter of 1 nm. .

h9500-picture

h9500-side-view

Transmission Electron Microscope Instrument Specifications

 

 

HT7830

H9500

Resolution

0.14

0.102 nm

Acceleration Voltage

20-120 kV

300keV, 200 keV, 100 keV

Magnification

1,000,000x

1,500,000x

Maximum Stage Tilt

± 10ᵒ

± 15ᵒ

Sample Size

3 mm

3 mm

EDS*

80 mm
Be – Am
Resolution of 127 eV

.
B – Am

Heating stage

 

In situ 900ᵒ

Source

LaB6

LaB6

Best For

Biological samples, polymers, and samples sensitive to e- beam damage

Highest resolution

* Detector window size dictates elemental sensitivity. Our detectors range from 10 mm to 80 mm with the latter producing the best data for low concentration elements.